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NPN Transistors
Bipolar transistors are so named because their operation involves both electrons and holes. These two kinds of charge carriers are characteristic of the two kinds of doped semiconductor material; electrons are majority charge carriers in n-type semiconductors, whereas holes are majority charge carriers in p-type semiconductors. In contrast, unipolar transistors such as the field-effect transistors have only one kind of charge carrier.
Charge flow in a BJT is due to diffusion of charge carriers across a junction between two regions of different charge concentrations. The regions of a BJT are called emitter, collector, and base.
BJTs come in two types, or polarities, known as PNP and NPN based on the doping types of the three main terminal regions. An NPN transistor comprises two semiconductor junctions that share a thin p-doped anode region, and a PNP transistor comprises two semiconductor junctions that share a thin n-doped cathode region
MPSA13 Darlington NS 30V 300mA 125Mhz TO92
..
R1.51
Ex Vat: R1.32
Ex Vat: R1.32
PCR406J TO92 Silicon Controlled Rectifier SCR
..
R5.95
Ex Vat: R5.18
Ex Vat: R5.18
PT331C IR Photo Transistor 5mm NPN
PT331C is a high speed and highly sensitive silicon NPN epitax..
R5.00
Ex Vat: R4.35
Ex Vat: R4.35
TIP132 Darlington TO-220 NPN 100V 8A 3Mhz Transistor
..
R7.00
Ex Vat: R6.09
Ex Vat: R6.09
TIP142 Darlington TO3P NPN 100Volt 10A 4Mhz Transistor
..
R30.00
Ex Vat: R26.09
Ex Vat: R26.09
TIP3055 TO3P 60V 10A NPN transistor (complementary TIP2955)
It is intended for power switching ci..
R24.50
Ex Vat: R21.30
Ex Vat: R21.30
TIP31C TO220 NPN 100V 3A 3Mhz Transistor
..
R9.50
Ex Vat: R8.26
Ex Vat: R8.26
Features
25 A Collector Current
Low Leakage Current ICEO = 1.0 mA @ 30 a..
R20.00
Ex Vat: R17.39
Ex Vat: R17.39
UGN3503U Ratiometric Linear Hall Effect Sensor
The UGN3503U Hall-effect sensors accurately track ..
R24.50
Ex Vat: R21.30
Ex Vat: R21.30
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Specials
