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3DD200 TO 3 250V 3A NPN Transistor
Product Code: TR 3DD200 NPN BIN 643 (D&E)
Availability: 42
Availability: 42
Price: R5.55
Ex Vat: R4.82
Ex Vat: R4.82
10 or more R5.64
50 or more R5.18
50 or more R5.18
Qty:
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ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified:
- V(BR)CEO Collector-Emitter Breakdown Voltage IC = 5mA; IB = 0 min 100 V
- V(BR)CBO Collector-Base Breakdown Voltage IC = 5mA; IE = 0 min 250 V
- V(BR)EBO Emitter-Base Breakdown Voltage IE = 1mA; IC = 0 min 6 V
- VCE(sat)Collector-Emitter Saturation Voltage IC = 3A; IB = 0.3A 1.5 V
- VBE(sat)Base-Emitter Saturation Voltage IC = 3A; IB = 0.3A 1.5 V
- ICBO Collector Cutoff Current VCB = 150V; IE =0 0.5 mA
- hFE DC Current Gain IC = 2A; VCE = 5V min 30 max 120
- tf Fall Time IC = 3A; IB1 = 0.2A, IB2 = -0.3A, 1.0
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