FR206 = BYV96 BYV96D Fast Recovery Diode 1.5A 800V 300nS

Product Code: DIODE FR206 BYV96 BYV96D 1.5A 800V 300nS BIN 623 (L)
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FR206 = BYV96 BYV96D Fast Recovery Diode 1.5A 800V 300nS

BYV96 BYV96D 1.5A 800V 300nS Fast soft-recovery controlled avalanche rectifier

BYV96 BYV96D Fast Recovery Diode 1.5A 800V 300nS

FEATURES:

Glass passivated· High maximum operating temperature· Low leakage current· Excellent stability· Guaranteed avalanche energy absorption capability·

DESCRIPTION:

Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

LIMITING VALUES:

In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYV96E VR continuous reverse voltage BYV96D BYV96E IF(AV) average forward current PARAMETER repetitive peak reverse voltage

Ttp = 55 °C; lead length 10 mm see Fig 2; averaged over any 20 ms period; see also Fig 6 Tamb = 55 °C; PCB mounting (see Fig.11); see Fig 3; averaged over any 20 ms period; see also Fig 6

repetitive peak forward current non-repetitive peak forward current

Ttp = 55 °C; see Fig 4 Tamb = 55 °C; see Fig 10 ms half sine wave; = Tj max prior to surge; VR = VRRMmax = 120 mH; = Tj max prior to surge; inductive load switched off see Fig 7

non-repetitive peak reverse avalanche energy storage temperature junction temperature

ELECTRICAL CHARACTERISTICS:

25 °C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYV96E IR reverse current VR = VRRMmax; see Fig VR = VRRMmax; = 165 °C; see Fig 9 trr reverse recovery time when switched from 1 A; measured 0.25 A; see Fig = 1 MHz; 0 V; see Fig 10 when switched from 30 V and dIF/dt = -1 A/µs; see Fig.13 CONDITIONS = Tj max; see Fig 3 A; see Fig 0.1 mA MIN. - TYP. -

diode capacitance maximum slope of reverse recovery current

THERMAL CHARACTERISTICS SYMBOL:

Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.11. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm note 1 VALUE 46 100 UNIT K/W